PART |
Description |
Maker |
AT29C257 AT29C257-12 AT29C257-12JC AT29C257-12JI A |
256K 32K x 8 5-volt Only CMOS Flash Memory
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ATMEL[ATMEL Corporation]
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AT29C256-9 AT29C256 AT29C256-70PC AT29C256-70JC AT |
256K 32K x 8 5-volt Only CMOS Flash Memory 256K (32K x 8) 5-volt Only Flash Memory
|
ATMEL[ATMEL Corporation]
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27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM 256K (32K x 8) CMOS EPROM 256K2K的8)的CMOS存储 DIODE SCHOTTKY 150V 60A TO247AC CAPACITOR 1500UF 80V ELECT TSHA CAP 270UF 400V ELECT TS-ED From old datasheet system 256K (32x8) CMOS EPROM
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YEONHO Electronics Co., Ltd. Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
LH52256CD-70LL |
CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM)
|
Sharp Corporation
|
27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM 256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8)低电压的CMOS存储 256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
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MICROCHIP[Microchip Technology] Microchip Technology Inc. Microchip Technology, Inc.
|
IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) 3.3V, 32K X 8 Static RAM
|
Integrated Device Technology IDT
|
UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
27C256-90 27C256-45 |
256K-BIT [32K x 8] CMOS EPROM
|
Macronix International Co., Ltd.
|
LH52256C LH52256CH |
CMOS 256K (32K x 8) Static RAM
|
Sharp Electrionic Compo... Sharp Electrionic Components
|
PM29F002T-70JC PM29F002T-90PC PM29F002T-55PC PM29F |
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位56K × 8.0伏,只有闪存的CMOS 2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位256K × 8.0伏,只有闪存的CMOS
|
PMC-Sierra, Inc.
|
28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70 Serial-out shift registers with input latches 16-SOIC 0 to 70 Octal bus transceivers 20-PDIP 0 to 70 Serial-out shift registers with input latches 16-PDIP 0 to 70 Voltage-controlled oscillator 14-SOIC 0 to 70 Serial-out shift registers with input latches 16-SO 0 to 70 Shift registers with input latches 20-SOIC 0 to 70 Dual voltage-controlled oscillators 16-SOIC 0 to 70 Dual voltage-controlled oscillators 16-PDIP 0 to 70 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32 Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特(32亩8位)的CMOS 12.0伏,整体擦除闪存 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32 Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|